PART |
Description |
Maker |
IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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IXTH28N50Q IXTT28N50Q |
Discrete MOSFETs: Standard N-channel Types Power MOSFETs Q-Class
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International Rectifier IXYS Corporation
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MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
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MOTOROLA[Motorola, Inc]
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IXFT12N100 IXFT10N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family From old datasheet system
|
IXYS[IXYS Corporation]
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MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
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FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation] Intersil, Corp.
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IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 |
HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
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FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
RFP30P06 RF1S30P06SM RFG30P06 RF1S30P06 FN2437 |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs From old datasheet system 30A 60V 0.065 Ohm P-Channel Power MOSFETs 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P沟道增强型功率MOS场效应管) 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
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INTERSIL[Intersil Corporation] Intersil, Corp.
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